SOLARIS X Plasma Focused Ion Beam - Scanning Electron Microscope

Product Overview

The SOLARIS X is an advanced Plasma Focused Ion Beam - Scanning Electron Microscope (FIB-SEM) designed for deep cross-sectioning, high-resolution end-pointing, and failure analysis of advanced semiconductor packages. Featuring the i-FIB+™ Xe plasma FIB column and Triglav™ ultra-high-resolution (UHR) electron column, SOLARIS X delivers artifact-free, large-area cross-sections for semiconductor failure analysis, IC delayering, and MEMS characterization.

With fast, low-noise SEM imaging, precise end-pointing, and Rocking Stage technology, SOLARIS X ensures smooth, high-quality cross-sectioning of TSVs, solder bumps, Cu pillars, and other buried structures, making it a powerful tool for semiconductor R&D, packaging analysis, and quality control labs.

Key Features

• Large-Area, Artifact-Free FIB Cross-Sections – Up to 1 mm-wide cross-sections for package-level failure analysis.
• i-FIB+™ Xe Plasma FIB Column – Delivers high-current, high-speed milling without Ga ion implantation.
• Triglav™ Ultra-High-Resolution SEM Column – 0.9 nm resolution for high-contrast imaging and precise defect localization.
• Rocking Stage for High-Quality Polishing – Minimizes curtaining effects and improves SEM observation during milling.
• Automated TEM Lamella Preparation – Precise lift-out and polishing for sub-10 nm node semiconductor analysis.
• Beam Coincidence for High-Resolution End-Pointing – Optimized electron and ion beam positioning for precise failure localization.
• Multi-Detector Imaging System – TriSE™ and TriBE™ detectors for enhanced topographic and material contrast.
• TESCAN Essence™ Software – Customizable workflow automation for different semiconductor applications.

Specifications

Applications

• Advanced IC Delayering & Package-Level FA – Examine sub-14 nm node devices with precise gas-assisted top-down delayering.
• Cross-Sectioning of TSVs, BGAs & MEMS – Reveal deeply buried structures without curtaining artifacts.
• End-Point Detection for Transistor & Interconnect Analysis – Identify nanoscale defects with high-resolution SEM imaging.
• Flip-Chip & 3D Stacked Die Inspection – Analyze bump connections, interposers, and through-silicon vias (TSVs).
• Bonding Wire & Solder Ball Characterization – Detect failures in microelectronic packaging.
• Planar & Cross-Sectional TEM Lamellae – Automated preparation for high-resolution TEM studies.
• Plasma FIB Milling of Large Areas – Bulk material removal at high sputtering rates.
• Sub-Surface Imaging with STEM – Enhanced material contrast for advanced material characterization.
• Lithography & Pattern Inspection – Ensure critical dimension accuracy and defect detection.